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R. Timm, A. Fian, M. Hjort, C. Thelander, E. Lind, J. N. Andersen, L.-E. Wernersson, and A. Mikkelsen
Reduction of native oxides on InAs by atomic layer deposited Al2O3 and HfO2
Appl. Phys. Lett. 97, 132904 (2010)

Abstract
Thin high-k oxide films on InAs, formed by atomic layer deposition, are the key to achieve high-speed metal-oxide-semiconductor devices. We have studied the native oxide and the interface between InAs and 2-nm-thick Al2O3 or HfO2 layers using synchrotron x-ray photoemission spectroscopy. Both films lead to a strong oxide reduction, obtaining less than 10% of the native As-oxides and between 10% and 50% of the native In-oxides, depending on the deposition temperature. The ratio of native In- to As-oxides is determined to 2:1. The exact composition and the influence of different oxidation states and suboxides is discussed in detail.

Link to the complete paper (if available):


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