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R. Timm, M. Hjort, A. Fian, B. M. Borg, C. Thelander, J. N. Andersen, L.-E. Wernersson, and A. Mikkelsen
Interface composition of InAs nanowires with Al2O3 and HfO2 thin films
Appl. Phys. Lett. 99, 222907 (2011)

Abstract
Vertical InAs nanowires wrapped by a thin high-k dielectric layer may be a key to a new generation of high-speed metal-oxide-semiconductor devices. Here, we have investigated the structure and chemical composition of the interface between InAs nanowires and 2 nm thick Al2O3 and HfO2 films. The native oxide on the nanowires is significantly reduced upon high-k deposition, although less effective than for corresponding planar samples, resulting in a 0.8 nm thick interface layer with an In-/As-oxide composition of about 0.7/0.3. The exact oxide reduction and composition including As-suboxides and the role of the nanowire geometry are discussed in detail.

Link to the complete paper (if available):


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