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Jun Wu,E. Lind,R. Timm, M. Hjort, A. Mikkelsen and L.-E. Wernersson
Al2O3/InAs metal-oxide-semiconductor capacitors on (100) and (111)B substrates
Appl. Phys Lett. 100, 132905 (2012)

Abstract
The influence of InAs orientations and high-k oxide deposition conditions on the electrical and structural quality of Au/W/Al2O3/InAs metal-oxide-semiconductor capacitors was investigated using capacitance-voltage (C-V) and x-ray photoemission spectroscopy techniques. The results suggest that the interface traps around the conduction band edge are correlated to the As-oxide amount, while less to those of As-As bonds and In-oxides. The quality of the deposited Al oxide determines the border trap density, hence the capacitance frequency dispersion. The comparison of different processing conditions is discussed, favoring a 350 C high-k oxide deposition on (111)B substrates followed by an annealing procedure at 400C.

Link to the complete paper (if available):


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