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Rainer Timm (Researcher)

Office: C364c
Phone: 282 94
E-mail: rainer.timm@sljus.lu.se
Homepage: www.sljus.lu.se/staff/rainer
Home Address:
Home Phone:
Mobile Phone: 0706-181611
Additional info:
Publications 21 hits with author Timm.
M. Hjort, S. Lehmann, J. Knutsson, A.A. Zakharov, Y.A. Du, S. Sakong, R. Timm,G. Nylund, E. Lundgren, P. Kratzer, K.A. Dick, and A. Mikkelsen
Electronic and Structural Differences between Wurtzite and Zinc Blende InAs Nanowire Surfaces: Experiment and Theory
ACS Nano (2014) In Press.

James L. Webb, Olof Persson, Kimberly A. Dick, Claes Thelander, Rainer Timm, and Anders Mikkelsen
High Resolution Scanning Gate Microscopy Measurements on InAs/GaSb Nanowire Esaki Diode Devices
Nano Research, (2014) In Press

Dmitry B. Suyatin, Vishal Jain, Valery A. Nebolsin, Johanna Trägårdh, Maria E. Messing, Jakob B. Wagner, Olof Persson, Rainer Timm, Anders Mikkelsen, Ivan Maximov, Lars Samuelson and Håkan Pettersson
Strong Schottky barrier reduction at Au-catalyst/GaAs-nanowire interfaces by electric dipole formation and Fermi level unpinning
Nature Commun. (2014) In Press

Rainer Timm, Olof Persson, David L. J. Engberg, Alexander Fian, James L. Webb, Jesper Wallentin, Andreas Jönsson, Magnus T. Borgström, Lars Samuelson, and Anders Mikkelsen
Current–Voltage Characterization of Individual As-Grown Nanowires Using a Scanning Tunneling Microscope
Nano Lett., 13 (2013) 5182

Martin Hjort, Sebastian Lehmann, Johan Valentin Knutsson, Rainer Timm, Daniel Jacobsson, Edvin Lundgren, Kimberly A. Dick, and Anders Mikkelsen
Direct imaging of atomic scale structure and electronic properties of GaAs wurtzite and zinc blende nanowire surfaces
Nano Letters DOI: 10.1021/nl402424x (2013)

O. Persson, E. Lind, E. Lundgren, J. Rubio-Zuazo, G. R. Castro, L.-E. Wernersson, A. Mikkelsen, and R. Timm
Interface characterization of metal-HfO2-InAs gate stacks using hard x-ray photoemission spectroscopy
AIP Advances 3, 072131 (2013)

Elin Grånäs, Mie Andersen, Mohammad A. Arman, Timm Gerber, Bjørk Hammer, Joachim Schnadt, Jesper N. Andersen, Thomas Michely, and Jan Knudsen
CO Intercalation of Graphene on Ir(111) in the Millibar Regime
J. Phys. Chem. C 117 16438 (2013). Full text

J. K. Kawasaki, T. Neulinger, R. Timm, M. Hjort, A. A. Zakharov, A. Mikkelsen, B. D. Schultz and C. J. Palmstrøm
Epitaxial growth and surface studies of the Half Heusler compound NiTiSn (001)
J. Vac. Sci. Technol. B 31(4), Jul/Aug 2013

Timm Gerber, Jan Knudsen, Peter J. Feibelman, Elin Grånäs, Patrick Stratmann, Karina Schulte, Jesper N. Andersen, and Thomas Michely
CO-Induced Smoluchowski Ripening of Pt Cluster Arrays on the Graphene/Ir(111) Moiré
ACS Nano, 7, 2020 (2013) Full text

Martin Hjort, Jesper Wallentin, Rainer Timm, Alexei A. Zakharov, Ulf Hakanson, Jesper N. Andersen, Edvin Lundgren, Lars Samuelson, Magnus T Borgstrom, and Anders Mikkelsen
Surface Chemistry, Structure and Electronic Properties from Microns to the Atomic Scale of Axially Doped Semiconductor Nanowires
ACS Nano 6, 9679 (2012)

Elin Granäs, Jan Knudsen,Ulrike A. Schröder, Timm Gerber, Carsten Busse, Mohammad A. Arman, Jesper N. Andersen, and Thomas Michely
Oxygen Intercalation under Graphene on Ir(111): Energetics, Kinetics, and the Role of Graphene Edges
ACS Nano, 11, 9951 (2012) Full text

Elin Grånäs, Jan Knudsen, Ulrike A. Schröder, Timm Gerber, Carsten Busse, Mohammad A. Arman, Karina Schulte, Jesper N. Andersen, and Thomas Michely
Oxygen Intercalation under Graphene on Ir(111): Energetics, Kinetics, and the Role of Graphene Edges
ACS Nano, 6, 9951 (2013) Full text

Jun Wu,E. Lind,R. Timm, M. Hjort, A. Mikkelsen and L.-E. Wernersson
Al2O3/InAs metal-oxide-semiconductor capacitors on (100) and (111)B substrates
Appl. Phys Lett. 100, 132905 (2012)

Jan Knudsen, Peter J. Feibelman, Timm Gerber, Elin Grånäs, Karina Schulte, Patrick Stratmann, Jesper N. Andersen, Thomas Michely
Clusters binding to the graphene moire on Ir(111): X-ray photoemission compared to density functional calculations
Phys. Rev. B., 85, 035407 (2012) Full text

R. Timm, M. Hjort, A. Fian, B. M. Borg, C. Thelander, J. N. Andersen, L.-E. Wernersson, and A. Mikkelsen
Interface composition of InAs nanowires with Al2O3 and HfO2 thin films
Appl. Phys. Lett. 99, 222907 (2011)

M. Hjort , J. Wallentin , R. Timm , A. A. Zakharov , J. N. Andersen , L. Samuelson , M. T. Borgstrom, A. Mikkelsen
Doping profile of InP nanowires directly imaged by PhotoEmission Electron Microscopy
Appl. Phys. Lett. 99, 233113 (2011)

J. Kawasaki, R. Timm, K. T. Delaney, E. Lundgren, A. Mikkelsen, and C. J. Palmstrom
Local Density of States and Interface Effects in Semimetallic ErAs Nanoparticles Embedded in GaAs
Phys. Rev. Lett. 107, 036806 (2011)

R. Timm, M. Hjort, A. Fian, C. Thelander, E. Lind, J. N. Andersen, L.-E.Wernersson, and A. Mikkelsen
Interface composition of atomic layer deposited HfO2 and Al2O3 thin films on InAs studied by X-ray photoemission spectroscopy
Microelectronic Engineering 88, 1091 (2011)

J.K. Kawasaki, R. Timm, T.E. Buehl, E. Lundgren, A. Mikkelsen, A.C. Gossard and C.J. Palmstrøm
Cross-Sectional Scanning Tunneling Microscopy and Spectroscopy of Semimetallic ErAs Nanostructures Embedded in GaAs
J. Vac. Sci. Technol. B 29, 03C104 (2011)

R. Timm, A. Fian, M. Hjort, C. Thelander, E. Lind, J. N. Andersen, L.-E. Wernersson, and A. Mikkelsen
Reduction of native oxides on InAs by atomic layer deposited Al2O3 and HfO2
Appl. Phys. Lett. 97, 132904 (2010)

Alexander Fian, Monica Lexholm, Rainer Timm, Bernhard Mandl, Ulf Håkanson, Dan Hessman, Edvin Lundgren, Lars Samuelson and Anders Mikkelsen
New flexible toolbox for nanomechanical measurements with extreme precision and at very high frequencies
Nano Letters 10 (2010) 3893.


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